Chinese device breaks old bottlenecks and can give AI the missing impulse, with graphene -based technology and picoscundos recordings
Researchers at Fudan University have developed the fastest recorded semiconductor storage device, a non -volatile flash memory called “Pox”, capable of programming a single bit in 400 pecoseconds (0.0000000004 S) – equivalent to 25 billion operations per second. The study, published on Wednesday in the journal Nature, raises non-volatile memory to a level of once exclusive speed of faster volatile memories and establishes a new milestone for AI hardware, which demands high data processing.
Breaking speed barriers
Static and dynamic ram memories (SRAM and DRAM) record data in 1 to 10 nanoseconds, but lose information when turned off. Flash chips, on the other hand, store data without energy, but operate in microseconds or milliseconds – slowly incompatible with modern AI accelerators, which process Terabytes of real -time parameters.
Fudan’s team, led by Professor Zhou Peng at the State Laboratory of Integrated Chips and Systems, reinvented Flash physics by replacing silicon channels with two -dimensional graphene, exploring their ballistic cargo transportation.
By adjusting the “Gaussian length” of the channel, the researchers have reached a phenomenon called two -dimensional superinjection, which injects massively into the storage layer, surpassing classic bottlenecks.
“With AI -guided process optimization, we lead to non -volatile memory to its theoretical limit,” Zhou told Xinhua. “This paves the way for high -speed flash memories in the future.”
One billion cycles in an instant
Chinsen Liu, co -author of the study, compares the advancement of the evolution of a USB stick that records a thousand times per second for a chip that performs a billion operations at the same time. The previous record of non -volatile flash speed was two million operations per second.
Because it is non -volatile, the POX maintains data without power, crucial characteristic for next generation AI and limited battery devices. The combination of low consumption and extreme speed can eliminate bottlenecks in AI hardware, where data transport – not processing – consumes more energy.
Industrial and strategic impact
Flash memory is a key piece in the global semiconductor strategy due to cost and scalability. Experts say Fudan’s innovation introduces a “totally new mechanism” capable of transforming the sector.
In mass production, Pox technology could replace SRAM caches in AI chips, reducing space and consumption. It would also enable devices with instant boot and databases that store complete sets in persistent RAM.
The advance still strengthens China’s efforts to leadership in semiconductors. The team did not disclose data on durability or production, but the use of graphene suggests compatibility with existing industrial processes. “Our work can revolutionize storage, boost industry and create new applications,” said Zhou.
Next Steps
Fudan engineers now work on expanding architecture and larger scale demonstrations. Trade partners have not been revealed, but Chinese manufacturers are already seeking to integrate 2D materials with CMOS production lines.
If successful, the POX can become a new class of ultra-rare and efficient memories, meeting the demand for accelerators to large language models-finally equipping AI hardware with storage at the height of its processing capacity.
With information from IE*
Source: https://www.ocafezinho.com/2025/04/20/china-quebra-recorde-com-memoria-10-mil-vezes-mais-veloz/
